REAL TIME PROCESS MONITORING AND CONTROL FOR SEMICONTOR LAYERS
摘要
A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group HIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB<SUB>2</SUB>VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.
申请公布号
WO2008039280(A2)
申请公布日期
2008.04.03
申请号
WO2007US18333
申请日期
2007.08.16
申请人
SOLYNDRA, INC.;ACHUTHARAMAN, VEDAPURAM, S.;CHANG, WEN;DIXIT, TARPAN;KRAUS, PHILIP
发明人
ACHUTHARAMAN, VEDAPURAM, S.;CHANG, WEN;DIXIT, TARPAN;KRAUS, PHILIP