| 摘要 |
A semiconductor device (npn bipolar transistor) includes an n-type collector layer, a base layer constituted by a p<SUP>+</SUP> diffusion layer, a SiGe layer and a p-type silicon film, an n-type emitter layer and a charge transport prevention film formed between the n-type collector layer and the n-type emitter layer and having an effect as a potential barrier with respect to either electrons or holes |
