| 摘要 |
<p>Disclosed herein are improved fin-type field effect transistor (FinFET) structures (100) and the associated methods of manufacturing the structures. In one embodiment FinFET drive current is optimized by configuring the FinFET (100) asymmetrically to decrease fin resistance between the gate (120) and the source region (101) and to decrease capacitance between the gate (120) and the drain region (102). In another embodiment device destruction at high voltages is prevented by ballasting the FinFET (300). Specifically, resistance is optimized in the fin (350) between the gate (320) and both the source (301) and drain (302) regions (e.g., by increasing fin length (383), by blocking source/drain implant from the fin (350), and by blocking silicide formation on the top surface (395) of the fin) so that the FinFET (300) is operable at a predetermined maximum voltage.</p> |
