| 摘要 |
<p>A photosensitive resin composition is provided to form a cured relief pattern having excellent mechanical properties by low-temperature curing, and to realize excellent lithographic characteristics comparable to a semiconductor photoresist. A photosensitive resin composition comprises a polymer represented by the following formula I, a photosensitizer, a compound having a methacryloyl or acryloyl group in the molecule, and a solvent. In formula I, Ar1 is a tetravalent aromatic or heterocyclic group; Ar2 is a divalent aromatic, heterocyclic, alicyclic or aliphatic group optionally having a silicon atom; Ar3 is a divalent aromatic, heterocyclic, aliphatic or alicyclic group; Ar4 is a group selected from -Ar1(OA)2- and Ar2; A is H or a protecting group: G is a monovalent organic group bound by way of a carbonyl or sulfonyl group; x is a number of 5-1,000; and y is a number of 0-900, with the proviso that at least 0.5 mol% of A in the polymer represented by formula I is a protecting group.</p> |
