| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a cell area and prevent a sidewall from running into a substrate owing to the thinning of its film, the sidewall formed at a side of a gate electrode when a shared contact is formed. <P>SOLUTION: The method for manufacturing the semiconductor device has the steps of forming, onto a semiconductor substrate on which a gate electrode 13 is formed through a gate insulating film, sidewalls 15 and 16 are formed at its both sides, and source-drains 17 and 18 are formed at its both sides, a sacrificial film 23 that covers the gate electrode 13, the source-drains 17 and 18, etc., forming a shared contact 24 in the sacrificial film 23, which makes an opening on one source-drain 18 from above the gate electrode 13, forming a conductive plug 26 inside the shared contact 24, which is connected to the gate electrode 13 and the source-drain 18, and removing the sacrificial film 23. <P>COPYRIGHT: (C)2008,JPO&INPIT |
