| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a reduction of a luminous efficacy of a light-emitting element after element dividing when a substrate is element-divided from a compound semiconductor by laser irradiation. <P>SOLUTION: A nitride semiconductor 5 is formed on a substrate 2. The nitride semiconductor 5 is etched along a location where element dividing lines 3, 4 are formed, to form an element dividing trench 12. Laser beams are irradiated toward the element dividing trench 12, whereby the element dividing lines 3, 4 are formed and an altered part 11 is formed in the substrate 2 along the element dividing lines 3, 4. The altered part 11 is formed discontinuously and linearly to a direction along the element dividing lines 3, 4. The substrate 2 is element-divided by using the altered part 11 as the cardinal point, to manufacture the light-emitting element 1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
