发明名称 PATTERNED SAPPHIRE SUBSTRATE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a patterned sapphire substrate. <P>SOLUTION: The manufacturing method includes process wherein first, a sapphire substrate is prepared and a mask layer is formed on the sapphire substrate. Here, the mask layer having a proper pattern exposes part of the sapphire substrate. Next, wet etching processing is carried out, and the exposed part of the sapphire is removed. An etching agent used in the wet etching processing contains sulfuric acid and a mixture of sulfuric acid and phosphoric acid. Next, the mask layer is removed, and a patterned sapphire substrate is formed. Furthermore, a method for manufacturing a light-emitting diode is included. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008078603(A) 申请公布日期 2008.04.03
申请号 JP20070011494 申请日期 2007.01.22
申请人 NATIONAL CENTRAL UNIV 发明人 CHIN SHIJIN;WU LI-YUN;LIU CHE-MING;LEE YEEU-CHANG
分类号 C23C16/02;C30B29/20;C30B33/10;H01L21/205;H01L33/32 主分类号 C23C16/02
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