| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily separate a semiconductor element such as an LED selectively grown on a substrate via a semiconductor growth promoting layer from the substrate and the semiconductor growth promoting layer. <P>SOLUTION: The manufacturing method of a semiconductor element is provided with a step of forming a base layer on the substrate; a step of configuring a section region selectively patterned so that the base layer becomes a plurality of independent element forming regions and a mask layer forming an injection port region as an injection port of an etching solution, on the base layer; a step of forming one or more semiconductor layers on the element forming regions and forming a desired semiconductor element thereon; a step of converting the side surface of the semiconductor element; a step of forming a metal supporting layer on the entire surface other than the injection port; a step of injecting the etching solution through the injection port region to remove the mask layer and the base layer; and a step of separating the semiconductor element from the metal supporting layer on the section region and obtaining semiconductor element chips. <P>COPYRIGHT: (C)2008,JPO&INPIT |
