发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve throughput by providing a manufacturing technique for reducing the number of photolithographic steps using a photoresist and simplifying a manufacturing process of a semiconductor device. SOLUTION: An etching mask for forming a pattern of a processing target layer such as a conductive layer and a semiconductor layer is produced without using a lithographic technique employing a photoresist. The etching mask consists of a light-absorbing layer made of a material absorbing a laser beam. The light-absorbing layer is irradiated with a laser beam via the photomask, and a mask is formed while utilizing laser ablation based on the energy of the laser beam absorbed by the light-absorbing layer. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008078634(A) |
申请公布日期 |
2008.04.03 |
申请号 |
JP20070214664 |
申请日期 |
2007.08.21 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MIYAIRI HIDEKAZU;JINBO YASUHIRO;HIGA EIJI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/027;G03F7/20;H01L21/28;H01L21/302;H01L21/3205;H01L21/336;H01L29/786 |
主分类号 |
H01L21/027 |
代理机构 |
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主权项 |
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地址 |
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