发明名称 METHOD OF PRODUCING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve throughput by providing a manufacturing technique for reducing the number of photolithographic steps using a photoresist and simplifying a manufacturing process of a semiconductor device. SOLUTION: An etching mask for forming a pattern of a processing target layer such as a conductive layer and a semiconductor layer is produced without using a lithographic technique employing a photoresist. The etching mask consists of a light-absorbing layer made of a material absorbing a laser beam. The light-absorbing layer is irradiated with a laser beam via the photomask, and a mask is formed while utilizing laser ablation based on the energy of the laser beam absorbed by the light-absorbing layer. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008078634(A) 申请公布日期 2008.04.03
申请号 JP20070214664 申请日期 2007.08.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYAIRI HIDEKAZU;JINBO YASUHIRO;HIGA EIJI;YAMAZAKI SHUNPEI
分类号 H01L21/027;G03F7/20;H01L21/28;H01L21/302;H01L21/3205;H01L21/336;H01L29/786 主分类号 H01L21/027
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