| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of oxidation-processing an insulating material embedded in a groove for a component isolation region etc. at a low temperature. SOLUTION: A method of manufacturing a semiconductor device is provided, which is characterized by: a step of forming a groove on a semiconductor substrate; a step of embedding an insulating material in the groove and a step of exposing the insulating material to active oxygen species to oxidize the insulating material down to the bottom of the groove. COPYRIGHT: (C)2008,JPO&INPIT
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