| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element from which good MR characteristics are acquired, without thickening the thickness of the layer consisting of a Heusler alloy formed on a spacer layer and without requiring the rise of temperature of annealing treatment. SOLUTION: The magnetoresistance effect element 4 is laminated so that with respect to a pinned layer 43 of which the magnetization direction is fixed, a nonmagnetic spacer layer 44, a free layer 45 of which the magnetization direction changes according to an external magnetic field, the spacer layer 44 may be located between the pinned layer 43 and the free layer 45. The free layer 45 and an inner layer 43c of the pinned layer includes a Heusler alloy, for example, a film consisting of Co50Mn<SB>y</SB>Si<SB>(50-y)</SB>, and the spacer layer 44 consists of a Cu<SB>(100-x)</SB>Zn<SB>x</SB>alloy. Concentration x of Zn of the spacer layer 44 is 0 at.%<x≤70 at.%, and the thickness of the spacer layer 44 is 0.9 nm or more and 4 nm or less. COPYRIGHT: (C)2008,JPO&INPIT
|
