| 摘要 |
PROBLEM TO BE SOLVED: To achieve both short channel effect suppression and mobility improvement by devising a film deposition method for a silicon-germanium film making up a source/drain. SOLUTION: This is a manufacturing method for a semiconductor device that forms an insulated gate field effect transistor (FET) on a semiconductor substrate 11, wherein after sources/drains 19 and 20 of the insulated gate FET have formed a concave portion 16 where the source/drain of the semiconductor substrate 11 is formed, a silicon material gas, a germanium material gas, a hydrogen chloride gas of an etching constituent gas, and a hydrogen gas of a carrier gas are supplied to film formation atmosphere to form a primary SiGe layer 17 not containing dopant around the inner surface of the concave portion, then forming a secondary SiGe layer 18 containing dopant onto the primary SiGe layer 17 in the concave portion by gradually supplying an impurity material gas containing impurities to the film formation atmosphere by increasing it up to a predefined amount required for film formation while introducing a suited amount of each of the above gases to the atmosphere. COPYRIGHT: (C)2008,JPO&INPIT
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