| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element, capable of obtaining a high MR changing rate and coping with high-density, as well as a magnetic head, a magnetic recording reproducing device and a magnetic random access memory employing the magnetoresistance effect element. SOLUTION: A first magnetic layer and a second magnetic layer are formed and an interlayer is formed between the first magnetic layer and the second magnetic layer through natural oxidation under a condition that the oxygen exposing amount of a metal layer containing at least one of Cr, Fe is not more than 1,000 langmuir and, further, an electrode for conducting electric current orthogonally to the surface of laminated film comprising the first magnetic layer, the second magnetic layer and the intermediate layer is formed to obtain the magnetoresistance effect element. COPYRIGHT: (C)2008,JPO&INPIT
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