| 摘要 |
A method for fabricating a recess pattern in a semiconductor device includes defining an active region on a substrate, forming a first mask pattern over the active region in a line type structure, forming a second mask pattern comprising an open region over the active region, the open region exposing a portion where the active region and the first mask pattern intersect, and etching the active region of the substrate exposed by the first and second mask patterns to form recess patterns.
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