| 摘要 |
A fuse of a semiconductor device and a method for forming the same are provided to increase redundancy repair efficiency by forming more fuses in the same area. A fuse of a semiconductor device comprises a first fuse line(202), a first interlayer dielectric(203), a first wire(205), a second fuse line(206), a second interlayer dielectric(207), and a second wire(209). The first fuse line is used to cut an electric over current flowing through a predetermined region of a semiconductor substrate. The first interlayer dielectric covers the first fuse line. The first wire is formed on the first interlayer dielectric to contact both ends of the first fuse line. The second fuse line is formed on the first interlayer dielectric to vertically overlap the first fuse line. The second interlayer dielectric covers the second fuse line. The second wire is formed on the second interlayer dielectric to contact the both ends of the second fuse line.
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