| 摘要 |
A method and a circuit for generating a back bias voltage are provided to prevent the increase of a potential level of a threshold voltage by changing the potential level of the back bias voltage in spite of speed decrease of a semiconductor device. A plurality of voltage detection units(120) are fed with and detect a back bias voltage, and have different detected potential levels by setting different target levels. A selection unit(140) selects one of output signals of the plurality of voltage detection units in response to temperature. A pumping unit(160) pumps a back bias voltage by receiving the output signal of the voltage detection unit selected by the selection unit. A temperature transfer unit(180) measures temperature of a semiconductor device, and transfers the measured temperature value to the selection unit as the temperature.
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