| 摘要 |
A method for fabricating a semiconductor device is provided to uniformly deposit a second HDP(High Density Plasma) oxide layer by removing a pad nitride layer and lowering an aspect ratio of a trench. A substrate(20) with a tunnel oxide layer(21), a conductive layer(22) for forming a gate and a pad nitride layer is prepared, and then some portions of the pad nitride layer, the conductive layer, the tunnel oxide layer and the substrate are etched to form trenches. A first insulating layer for isolation is deposited on the entire surface of the substrate to bury a portion of the trenches. A sacrificial layer is deposited on the first insulating layer to fully bury the trenches. The sacrificial layer and the first insulating layer are etched to expose the pad nitride layer, and then the pad nitride layer is removed to lower an aspect ratio of the trenches. The sacrificial layer is removed, and then a second insulating layer is formed to bury the trenches.
|
