| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for metal assuring quick chemical and mechanical polishing speed, improving flatness with less dishing and enabling manufacture of LSI where a groove is rarely formed between a copper wire and a barrier layer. <P>SOLUTION: The polishing solution for metal materials used for realizing chemical and mechanical flatness of a semiconductor device is characterized in including an amino acidic derivative having at least one tetrazole ring or triazole ring, for example, the amino acidic derivative expressed by an general expression (I). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
