发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To start ROM read operation of a plurality of memory chips at different timing when turning on power. <P>SOLUTION: A power-on reset circuit 18 is composed of a power-on level detector circuit 18a to detect the power supply voltage to output a power-on reset signal, and a delay circuit 18b to delay the power-on reset signal outputted from the power-on level detector circuit 18a. Two pads P0, P1 are connected to the delay circuit 18b to specify the chip address. The delay time in the delay circuit 18b is controlled by the combination of "L" and "H" voltages applied to those pads. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008077834(A) 申请公布日期 2008.04.03
申请号 JP20070318859 申请日期 2007.12.10
申请人 TOSHIBA CORP 发明人 KANDA KAZUE;NAKAMURA HIROSHI
分类号 G11C16/02 主分类号 G11C16/02
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