METHOD OF PRODUCING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor device having a satisfactory quality insulating film by preventing mixture of carbon, even when film formation is to be executed under a low-temperature condition, using TMS (tetramethylsilane) for a plasma CVD method. SOLUTION: In the method of producing a semiconductor device having an insulating film formed in a low temperature condition using TMS, the insulating film is formed by a plasma CVD method at a substrate temperature of a room temperature-250°C using TMS as a gas of a material of the insulating film and nitrous oxide (N2O) as an oxide gas. COPYRIGHT: (C)2008,JPO&INPIT