| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device of which the etching rate of a silicon oxide film is stabilized and more stable device characteristics are provided. SOLUTION: In the manufacturing method of the semiconductor device, a perhydrogen polysilazane is applied on a substrate 11. The substrate 11 which is applied with at least the perhydrogen polysilazane is submerged in a mixture liquid containing such water as heated to 120°C or higher and applied with ultrasonic waves, to reform the perhydro-polisilazane to silicon oxide. COPYRIGHT: (C)2008,JPO&INPIT
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