| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that crystallizes a high dielectric film by suppressing thermal budget. SOLUTION: The method for manufacturing a semiconductor device includes a step for forming a first film formed of a material having a higher conductance than that of silicon oxide on a substrate, a step for crystallizing the first film by heating, a step for reducing the thickness of the crystallized first film, and a step for forming a second film on the thinned first film is provided. COPYRIGHT: (C)2008,JPO&INPIT
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