发明名称 Technique for improved ion beam transport
摘要 A technique for improved ion implantation is provided. The technique is embodied as an electrostatic filter for an ion implantation device. The electrostatic filter is located just prior to deceleration and may be integrated with a decelerator. Electrodes are used to generate an electric field to separate neutrals from ions. Also, the filter may include active cooling to reduce background gas pressure, a precursor to neutral particle formation. Electrode geometry may also inhibit high energy neutrals from contaminating the target substrate.
申请公布号 US2008078949(A1) 申请公布日期 2008.04.03
申请号 US20060529508 申请日期 2006.09.29
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BENVENISTE VICTOR
分类号 H01J37/317 主分类号 H01J37/317
代理机构 代理人
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