| 摘要 |
A method for forming a plug in a semiconductor device is provided to improve an open defective of a storage node contact hole when a line type storage node contact plug is formed. A conductive pattern having a hard mask(40) is formed on an upper portion of a substrate as the uppermost layer. A sacrificial layer(39) comprising the conductive pattern using organic of polymeric series containing carbon is formed on the substrate. The sacrificial layer comprising the carbon is etched by using a line type mask to form an opened portion for opening between the adjacent conductive patterns. A plug is formed in the opened portion, and the remaining sacrificial layer is removed. The sacrificial layer comprising the carbon is formed at a temperature of at least 300°C.
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