| 摘要 |
A method for manufacturing a contact hole of a semiconductor device is provided to prevent a contact failure between conductive layers by increasing a contact area between the conductive layers. A contact plug(24), which penetrates a first insulation layer(23) is formed on a substrate(21). An etching buffer layer(25) and a second insulation layer are sequentially formed on the substrate. The second insulation layer(26) is etched, such that the etching buffer layer is exposed. The etching buffer layer is etched, such that the contact plug is exposed. The etching process of the etching buffer layer is performed from a wet etching process to a dry etching process, or vice versa. The first insulation layer is selectively etched, such that the contact hole is formed. A conductive layer is deposited and etched, such that the contact plug is formed in the contact hole.
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