| 摘要 |
A method for fabricating a semiconductor device is provided to increase a contact area between a metal plug and a contact plug by forming the contact plug in a contact region of a cell area. After an interlayer dielectric(445) is deposited on the entire substrate including a metal plug(440), the interlayer dielectric of a contact forming region(MCR) in a cell area(C) is etched to form a first contact hole(530) for exposing a side of the metal plug. Also, the interlayer dielectric and a mold insulating layer(435) in a peripheral area are etched to form a second contact hole(540) for exposing an upper portion of a bit line(420). A second metal layer for a plug is deposited on the interlayer dielectric to bury the first and second contact holes, and then the second metal layer is etched to form a first contact plug(450) contacting the metal plug and a second contact plug(460) contacting the bit line.
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