| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, having low on-resistance even in applications where high withstand voltage is required and even in a superjunction element with narrow column width. SOLUTION: A semiconductor substrate includes an N column region 1 and a P column region 2 in contact with each other formed therein. The semiconductor device further includes an N body region 15 in contact with the N column region 1; a P body region 5 in contact with the P column region 2; an N source region 3 in contact with the P body region 5 but not in contact with the N column region 1; a P source region 13 in contact with the N body region 15 but not in contact with the P column region 2; and a first gate electrode 6 and a second gate electrode 16 insulated from the foregoing regions. A first gate transistor is constituted by permitting the N source region 3, P body region 5, and N column region 1 to face the first gate electrode 6. A second gate transistor is constituted by permitting the P source region 13, N body region 15, and P column region 2 to face the second gate electrode 16. COPYRIGHT: (C)2008,JPO&INPIT |
