METHOD OF FORMING INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of forming insulating film capable of forming a proper insulating film by preventing mixture of carbon, even when film formation is carried out under low temperature conditions that uses tetramethylsilane (TMS) in a plasma CVD method. SOLUTION: In the method of forming an insulating film in a semiconductor device, TMS as a material gas of the insulating film and nitrous oxide (N2O) as an oxide gas are used, to form the insulating film at a substrate temperature ranging from room teperature up to 250°C by plasma CVD method. COPYRIGHT: (C)2008,JPO&INPIT