| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a compound barrier film that does not have step irregularities in a single process in single equipment. SOLUTION: The method is provided with a metal target 6 connected to a direct current source 5 in a vacuum chamber 1; and a magnetron cathode 9 equipped with a magnet 7 at the back of the metal target, and an RF coil 8 for improving the ionization efficiency at the front of the metal target. Also, the method controls the input power to the metal target and the RF coil for generation of plasma, and the feed volume of the inert gas and reactive gas to the vacuum chamber for sputtering. Film formation and compound formation of a metal film are performed alternately and repeatedly, on the surface of a silicon semiconductor substrate 13 that is formed facing the metal target. COPYRIGHT: (C)2008,JPO&INPIT
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