发明名称 METHOD FOR MANUFACTURING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure which eliminates the need for removal of a hard mask. SOLUTION: The manufacturing method for a structure containing silicon oxide includes a step for forming a primary layer comprising organic SOG on a substrate and a step for forming a secondary layer comprising inorganic SOG on the primary layer. Thereafter, the primary layer is etched by using a pattern formed on the secondary layer as a mask and then the primary layer and the secondary layer are calcined to manufacture the structure containing silicon oxide. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008078617(A) 申请公布日期 2008.04.03
申请号 JP20070148555 申请日期 2007.06.04
申请人 CANON INC 发明人 TERASAKI ATSUNORI;SEKI JUNICHI;ITO TOSHIKI
分类号 H01L21/3065;B81C1/00;H01L21/316 主分类号 H01L21/3065
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