发明名称 |
METHOD FOR MANUFACTURING STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure which eliminates the need for removal of a hard mask. SOLUTION: The manufacturing method for a structure containing silicon oxide includes a step for forming a primary layer comprising organic SOG on a substrate and a step for forming a secondary layer comprising inorganic SOG on the primary layer. Thereafter, the primary layer is etched by using a pattern formed on the secondary layer as a mask and then the primary layer and the secondary layer are calcined to manufacture the structure containing silicon oxide. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008078617(A) |
申请公布日期 |
2008.04.03 |
申请号 |
JP20070148555 |
申请日期 |
2007.06.04 |
申请人 |
CANON INC |
发明人 |
TERASAKI ATSUNORI;SEKI JUNICHI;ITO TOSHIKI |
分类号 |
H01L21/3065;B81C1/00;H01L21/316 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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