| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a tunnel-type magnetism detecting element, capable of maintaining soft magnetic characteristics of a free magnetic layer in a proper state and increasing the rate of change of resistance (ΔR/R) as compared to conventional elements, especially relating to a tunnel-type magnetism detecting element having an insulating barrier layer formed of Mg-O. SOLUTION: An experiment of annealing temperature dependency of the rate of change of resistance (ΔR/R) for RA is executed using a tunnel-type magnetism detecting element in which Co<SB>40 at%</SB>Fe<SB>40 at%</SB>B<SB>20 at%</SB>/Mg-O/Co<SB>50 at%</SB>Fe<SB>50 at%</SB>are used in a portion having an upper magnetic layer, the insulating barrier layer and an enhanced layer laminated, in this order, from the bottom of a laminate T1. A result of the experiment shows that a high resistance change rate (ΔR/R) can be obtained in a low range of low RA (2-4Ωμm<SP>2</SP>) by setting an annealing temperature at a range of 270-310°C. COPYRIGHT: (C)2008,JPO&INPIT
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