发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To improve a wiring efficiency and an area efficiency. SOLUTION: Comprising metal layers 3a, 3b having portions projecting to the outsides of an n-type diffusion layer 2a and a p-type diffusion layer 2b facing each other in planar view on the upper surface of the n-type diffusion layer 2a and the p-type diffusion layer 2b, and contact parts 40a, 40b in parallel direction with a power supply voltage line 1a and a ground voltage line 1b on the upper surface of the projected portions of the metal layers 3a, 3b creates a vacant area in the region on the upper surface of the metal layers 3a, 3b. This makes it possible to provide a number of wirings 6 to improve wiring efficiency and area efficiency. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008078342(A) 申请公布日期 2008.04.03
申请号 JP20060255194 申请日期 2006.09.21
申请人 FUJITSU LTD 发明人 KUSUHO JUNJI
分类号 H01L21/822;H01L21/3205;H01L21/82;H01L23/52;H01L27/04 主分类号 H01L21/822
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