| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables carrier mobility in an MIS transistor to be controlled by an insulating film covering the MIS transistor and is easy to manufacture. SOLUTION: In a semiconductor device 50, a plurality of MIS transistors 20N, 20P, and 30P are arranged on a semiconductor substrate 10, and the upper surface of the semiconductor substrate and the plurality of MIS transistors are covered with a tensile stress film 40T. The thickness of a tensile stress film is substantially constant, on a gate electrode 16 of each of the plurality of first class MIS transistors 20N and 20P arranged in a high-density region HD of which integration density of MIS transistors is relatively high. The thickness of the tensile stress film is the smallest, on a gate electrode of a P channel MIS transistor 30P in a plurality of second class MIS transistors arranged in a low-density region LD of which integration density of MIS transistors is relatively low. COPYRIGHT: (C)2008,JPO&INPIT
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