| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of an intermediate region due to metal diffusion in a connection portion between conductors in a semiconductor device provided with the two conductors, at least one of them having an FUSI (fully silicided) structure. SOLUTION: In the semiconductor device, the first conductor 116 as a gate electrode of an n-type FET and the second conductor 117 as a gate electrode of a p-type FET are electrically connected to each other so as to have the same potential. At least any one of the first and second conductors 116 and 117 has the FUSI structure. A level difference having an eave 118 is formed on at least one part of a boundary between the first and second conductors 116 and 117. COPYRIGHT: (C)2008,JPO&INPIT
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