| 摘要 |
This invention relates to organometallic compounds represented by the formula (L<SUB>1</SUB>)<SUB>y</SUB>M(L<SUB>2</SUB>)<SUB>z-y </SUB>wherein M is a Group 5 metal or a Group 6 metal, L<SUB>1 </SUB>is a substituted or unsubstituted anionic 6 electron donor ligand, L<SUB>2 </SUB>is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L<SUB>1 </SUB>and L<SUB>2 </SUB>is equal to 0 .; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
|
