| 摘要 |
<p>A semiconductor device comprises a silicon substrate (11), a gate electrode (16) located across a gate insulator (13) on the silicon substrate, and ladders (15) which are located between the gate insulator and the gate electrode, have an inherent stress different from that of the gate electrode, and are arrayed in a direction perpendicular to the direction of a current flowing through a channel region immediately beneath the gate electrode.</p> |
