| 摘要 |
<p>A photoresist pattern for a semiconductor device and a manufacturing method thereof are provided to prevent a shadowing phenomenon by arranging a sidewall of the photoresist pattern to be tapered toward an edge of a wafer. A photoresist film(410) is deposited on a semiconductor substrate(400). A photomask(420), on which a pattern to be transferred is formed, is arranged on the photoresist film. An exposure process and a developing process are performed. An inertia gas is injected to a non-expansion region after a developing process, such that a sidewall of the photoresist pattern is slanted toward an edge of the semiconductor substrate. Materials are cured in the region(430), where the inertia gas is injected, rather than the region(440), where no gas is injected. A baking process is performed, such that the photoresist pattern is formed at a contrast angle.</p> |
