| 摘要 |
<p>A semiconductor device is provided to stabilize an operation and to enhance reliability by suppressing the reduction of light sensitivity and to suppressing the generation of a parasitic resistance. A current mirror circuit(111) includes a reference TFT(104) and an output TFT(105) in order to amplify an output of a photoelectric conversion element. A power supply unit(101) has high and low potential electrodes. Each of the reference TFT and the output TFT is formed with an n type TFT. One side of source and drain electrodes of the reference TFT is electrically connected through the photoelectric conversion element to the high potential electrode. One side of the source and drain electrodes of the output TFT is electrically connected to the high potential electrode. The other side of the source and drain electrodes of the reference TFT is electrically connected to the low potential electrode. The other side of the source and drain electrodes of the output TFT is electrically connected to the low potential electrode. The reference TFT is arranged nearly to the low potential electrode in comparison with the output TFT.</p> |
