发明名称 |
IMPROVED RADIATION IMMUNITY OF INTEGRATED CIRCUITS USING BACKSIDE DIE CONTACT AND ELECTRICALLY CONDUCTIVE LAYERS |
摘要 |
Radiation hardened integrated circuit devices may be fabricated using conventional designs and process, but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. An exemplary BGR structure includes a high-dose buried guard ring (HBGR) layer which is contacted to ground through the backside of the wafer or circuit die, thus forming a Backside BGR (BBGR) structure. In certain embodiments, the starting wafer may be highly doped to reduce the resistance from the HBGR to the back of the wafer, which is then further contacted to ground through the package. The performance of such devices may be further improved by using an electrically conductive adhesive to attach the die and to electrically connect the silicon substrate region to the package's conductive header, substrate, or die attach pad, which in turn is typically connected to one or more package pins/balls.
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申请公布号 |
WO2008019329(A3) |
申请公布日期 |
2008.04.03 |
申请号 |
WO2007US75228 |
申请日期 |
2007.08.04 |
申请人 |
SILICON SPACE TECHNOLOGY CORPORATION;MORRIS, WESLEY H.;GWIN, JON;LOWTHER, REX |
发明人 |
MORRIS, WESLEY H.;GWIN, JON;LOWTHER, REX |
分类号 |
H01L21/761;H01L21/70;H01L21/762 |
主分类号 |
H01L21/761 |
代理机构 |
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主权项 |
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地址 |
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