| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of plasma-etching which is free from a difference in dense and sparse shapes which comes out between dense and sparse regions of a mask pattern in processing a device at spacing of 100 nm or less. SOLUTION: To form a sidewall protection film in a dense pattern region, an additive gas having a high C/F ratio such as C<SB>4</SB>F<SB>8</SB>gas is added to an etching gas to increase a production of CF<SB>2</SB>radicals, which has a low attachment coefficient and can react to be a constituent of a sidewall protection film, and further a Xe gas is added to inhibit a dissociation effect by means of decreasing an electron temperature. COPYRIGHT: (C)2008,JPO&INPIT
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