| 摘要 |
A method for forming a shallow trench isolation structure, comprising the steps of: sequentially forming a pad oxide layer and an etch barrier layer on a semiconductor substrate, and sequentially defining the etch barrier layer, the pad oxide layer, and the substrate to form a trench; forming a liner oxide layer on the inner surface of the trench; forming a isolation oxide layer which fills up the trench and covers the sidewall of the pad oxide layer and the etch barrier layer; planarizing the isolation oxide layer until the etch barrier layer has been exposed; sequentially removing the etch barrier layer and the pad oxide layer on the substrate; forming a spin-on-glass layer on the substrate and the isolation oxide layer such that the recess on the sidewall of the trench is filled with the spin-on-glass; performing the process of removing the spin-on-glass layer until both of the substrate and the isolation oxide layer have been exposed. The disadvantage that the recess is formed on the sidewall of the trench can thus be overcome.
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