| 摘要 |
A high-voltage-resistant MOS transistor having high electrical strength and a method for manufacturing the same, whereby to effectively decrease cost of manufacturing, are provided. The gate electrode includes a pair of separate opposition parts and a combination part sandwiched by the pair of opposition parts so that the opposition parts are opposed to each other so as not to overlap with the element region and the combination part overlaps with the element region. Each length of the opposition parts in a junction direction is longer than that of the combination part. The sidewall insulating film is formed so as to be continuous between the opposition parts and partially overlap with the element region. Therefore, the number of processes and a processing period for forming the MOS transistor can be decreased and uniformity of LDD lengths of the MOS transistors can be improved.
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