| 摘要 |
A substrate processing apparatus exposes a substrate in a process zone of a process chamber to a plasma of a precursor gas comprising a hydrocarbon gas to deposit carbon-doped silicon on the substrate. An effluent comprising unreacted precursor gas and byproducts from the carbon-doped silicon deposition process is exhausted from the process zone and passed into an effluent treatment zone of an effluent treatment reactor. An additive gas comprising an oxygen-containing gas is added to the effluent treatment zone and a plasma is formed of the effluent and additive gas to treat the effluent to reduce the content of unreacted precursor gas and byproduct in the effluent.
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