发明名称 |
METHOD OF FABRICATING LIGHT EMITTING DIODE CHIP |
摘要 |
<p>The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.</p> |
申请公布号 |
WO2008038917(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
WO2007KR04448 |
申请日期 |
2007.09.14 |
申请人 |
KIM, JONG KYU;YOON, YEO JIN;SEOUL OPTO DEVICE CO., LTD.;LEE, JUN HEE |
发明人 |
LEE, JUN HEE;KIM, JONG KYU;YOON, YEO JIN |
分类号 |
H01L33/00;H01L33/20 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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