<p>A one-time-programmable memory cell uses two complementary antifuses that are programmed in a complementary fashion such that only one of the two complementary antifuses is stressed by a programming voltage. The programming voltage stress one a particular one of the complementary antifuses indicates a logical state of the memory cell. For example, a logical high state may correspond to a first one of the complementary antifuses being stressed whereas a logical low state may correspond to the stressing of the remaining one of the complementary antifuses.</p>
申请公布号
WO2008039795(A1)
申请公布日期
2008.04.03
申请号
WO2007US79452
申请日期
2007.09.25
申请人
NOVELICS, LLC;TERZIOGLU, ESIN;WINOGRAD, GIL I.;AFGHAHI, MORTEZA CYRUS
发明人
TERZIOGLU, ESIN;WINOGRAD, GIL I.;AFGHAHI, MORTEZA CYRUS