THIN FILM TRANSISTOR HAVING A ELECTRIC THIN FILM TRANSISTOR AND A PHOTO THIN FILM TRANSISTOR, AND FABRICATION METHOD

摘要

A thin film transistor and a manufacturing method thereof are provided to improve a switch characteristic for light and electricity by using an electrical thin film transistor using a polycrystal silicon layer and an optical thin film transistor using an amorphous silicon layer. An electrical thin film transistor includes a metal layer(200), a silicon layer(300a) formed on the metal layer and serving as a heat carrier layer, an insulating layer(400) formed on the silicon layer, and a polycrystal silicon layer(500a) formed on the insulating layer and serving as a channel layer. An optical thin film transistor includes a metal layer serving as a gate electrode(GE2), an insulating layer formed on the metal layer and serving as a gate insulating layer(GS2), and an amorphous silicon layer formed on the insulating layer and serving as a channel layer.