| 摘要 |
<p>A method for manufacturing a flash memory device is provided to obtain reliability in forming a source line and its upper area and increase productivity by forming an insulation layer and sequentially forming a first stop layer, a buffer layer and a second stop layer. A method for manufacturing a flash memory device includes forming a source line(30) on a substrate; forming a first insulation layer(31) on the source line; forming a first stop layer(32) on the first insulation layer; forming a buffer layer(33) on the first stop layer; forming a second stop layer(34) on the buffer layer; forming a second insulation layer(35) on the second stop layer; forming a hole by selectively removing the insulation layer through the use of the second stop layer as an etch barrier layer; removing the first stop layer and the buffer layer adapted in a lower part of the hole; and forming a spacer in a sidewall of the hole by using the first stop layer as an etch barrier layer.</p> |
