| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the heat radiation properties of a semiconductor device, with a plurality of semiconductor chips encapsulated. <P>SOLUTION: A power MOSFET chip 2 for controlling is disposed on an input lead board 5, and a drain terminal DT1 is formed on the back side of this chip; while a source terminal ST1 and a gate terminal GT1 are formed on the main side, and the source terminal ST1 is connected to a lead board 12 for source. A power MOSFET chip 3 for synchronization is disposed on the output lead board 6 and a drain terminal DT2 is formed on the back side of this chip and the terminal DT2 is connected to the output lead board 6; while a source terminal ST2 and a gate terminal GT2 are formed on the main side of this chip, and the source terminal ST2 is connected to a lead board 13 for source. By exposing the lead boards 12 and 13 for source, the heat radiation properties of the MCM1 are enhanced. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
