| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive for flattening polishing of a copper-wiring film in a semiconductor device manufacturing process. <P>SOLUTION: A composition for a chemical mechanical polishing in a manufacture for the semiconductor device contains abrasive grains (A), cyanuric acid (B1) or its salt (B2), boric acid (C1) or its salt (C2), an oxidant (D) and water (E). Metallic oxide grains (A1), organic high-molecular grains (A2) or their combination are used as the abrasive grains (A). Metaboric acid, tetraboric acid, pentaboric acid, octaboric acid or their combination is used as boric acid (C1). At least one kind of a substance selected from a group composed of copper, aluminum, tungsten, tantalum and these alloy, silicon oxide and a low dielectric-constant insulating film is used as a polished material. A manufacturing method for the semiconductor device contains a process for polishing a substrate forming a metallic wiring, a barrier metal or the insulating film in a pattern shape. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
