| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which well operates in response to a high-frequency signal. SOLUTION: The Schottky barrier diode is provided with a high-concentration impurity layer having a semiconductor material doped with an impurity; a low-concentration impurity layer formed on the upper surface of the high-concentration impurity layer and having lower concentration of an impurity to be doped to the semiconductor material than that of the high-concentration impurity layer; an anode terminal formed of a metal material and provided so as to contact the low-concentration impurity layer; a guard ring provided so as to surround the low-concentration impurity layer on the upper surface of the high-concentration impurity layer, and becoming in ohmic contact with the high-concentration impurity layer; and a cathode electrode contacting the guard ring. COPYRIGHT: (C)2008,JPO&INPIT |
